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IRF640S
the part number is IRF640S
Part
IRF640S
Manufacturer
Description
MOSFET N-CH 200V 18A D2PAK
Lead Free/ROHS
pb RoHs
Datasheets
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Specification
Drain to Source Voltage (Vdss): 200V
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Packaging: Tube
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Detailed Description: N-Channel 200V 18A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount D2PAK
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: N-Channel
Series: -
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Operating Temperature: -55°C ~ 150°C (TJ)
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