| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Drain to Source Voltage (Vdss): | 30V |
|---|---|
| Power Dissipation (Max): | 3.6W (Ta), 42W (Tc) |
| Package / Case: | DirectFET™ Isometric MT |
| Mounting Type: | Surface Mount |
| Packaging: | Cut Tape (CT) |
| Supplier Device Package: | DIRECTFET™ MT |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Detailed Description: | N-Channel 30V 27A (Ta), 92A (Tc) 3.6W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MT |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 3 (168 Hours) |
| Email: | [email protected] |
| FET Type: | N-Channel |
| Series: | HEXFET® |
| Current - Continuous Drain (Id) @ 25°C: | 27A (Ta), 92A (Tc) |
| Other Names: | *IRF6603 IRF6603CT |
| Input Capacitance (Ciss) (Max) @ Vds: | 6590pF @ 15V |
| Vgs (Max): | +20V, -12V |
| Rds On (Max) @ Id, Vgs: | 3.4 mOhm @ 25A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 4.5V |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
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