shengyuic
shengyuic
IRF6721STRPBF
the part number is IRF6721STRPBF
Part
IRF6721STRPBF
Manufacturer
Description
MOSFET N-CH 30V 14A DIRECTFET
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Drain to Source Voltage (Vdss): 30V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Package / Case: DirectFET™ Isometric SQ
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: DIRECTFET™ SQ
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 30V 14A (Ta), 60A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: N-Channel
Series: HEXFET®
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc)
Other Names: IRF6721STRPBF-ND IRF6721STRPBFTR SP001530858
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 15V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 14A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Related Parts For IRF6721STRPBF
IRF60B217

Infineon Technologies

MOSFET N-CH 60V 60A TO220AB

IRF60B217

International Rectifier

TRENCH 40<-<100V

IRF60DM206

Infineon

MOSFET N-CH 60V 130A

IRF60DM206

Infineon Technologies

MOSFET N-CH 60V 130A DIRECTFET

IRF60DM206

International Rectifier

IRF60 - 12V-300V N-CHANNEL POWER

IRF60DM206ATMA1

Infineon Technologies

FET N-CHANNEL

IRF60R217

Infineon Technologies

MOSFET N-CH 60V 58A DPAK

IRF60SC241ARMA1

Infineon Technologies

MOSFET N-CH 60V 360A TO263-7

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!