| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Drain to Source Voltage (Vdss): | 25V |
|---|---|
| Power Dissipation (Max): | 2.1W (Ta), 20W (Tc) |
| Package / Case: | DirectFET™ Isometric S1 |
| Mounting Type: | Surface Mount |
| Packaging: | Cut Tape (CT) |
| Supplier Device Package: | DIRECTFET S1 |
| Vgs(th) (Max) @ Id: | 2.1V @ 25µA |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | N-Channel 25V 16A (Ta), 50A (Tc) 2.1W (Ta), 20W (Tc) Surface Mount DIRECTFET S1 |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Email: | [email protected] |
| FET Type: | N-Channel |
| Series: | HEXFET® |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Ta), 50A (Tc) |
| Other Names: | IRF6810STR1PBFCT |
| Input Capacitance (Ciss) (Max) @ Vds: | 1038pF @ 13V |
| Vgs (Max): | ±16V |
| Rds On (Max) @ Id, Vgs: | 5.2 mOhm @ 16A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!