shengyuic
shengyuic
IRF7379
the part number is IRF7379
Part
IRF7379
Manufacturer
Description
MOSFET N/P-CH 30V 8-SOIC
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Drain to Source Voltage (Vdss): 30V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Packaging: Tube
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Detailed Description: Mosfet Array N and P-Channel 30V 5.8A, 4.3A 2.5W Surface Mount 8-SO
FET Feature: Standard
Power - Max: 2.5W
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: N and P-Channel
Series: HEXFET®
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
Other Names: *IRF7379
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Related Parts For IRF7379
IRF7027TR

International Rectifier

Micro8

IRF710

Vishay

MOSFET N-CH 400V 2A TO-220AB

IRF710

Vishay Siliconix

MOSFET N-CH 400V 2A TO220AB

IRF710

onsemi

MOSFET N-CH 400V 2A TO220AB

IRF710

Fairchild Semiconductor

MOSFET N-CH 400V 2A TO220AB

IRF710

Harris Corporation

PFET, 2A I(D), 400V, 3.6OHM, 1-E

IRF7101PBF

International Rectifier

SOP8

IRF7101PBF

Infineon Technologies

MOSFET 2N-CH 20V 3.5A 8SO

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!