1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
Drain to Source Voltage (Vdss): | 28V |
---|---|
Power Dissipation (Max): | 2.5W (Ta) |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Packaging: | Tube |
Supplier Device Package: | 8-SO |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Detailed Description: | N-Channel 28V 11A (Ta) 2.5W (Ta) Surface Mount 8-SO |
FET Feature: | - |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Email: | [email protected] |
FET Type: | N-Channel |
Series: | HEXFET® |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Other Names: | *IRF7811A SP001565580 |
Input Capacitance (Ciss) (Max) @ Vds: | 1760pF @ 15V |
Vgs (Max): | ±12V |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 11A, 10V |
Technology: | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 4.5V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!