shengyuic
shengyuic
IRF9Z24NS
the part number is IRF9Z24NS
Part
IRF9Z24NS
Manufacturer
Description
MOSFET P-CH 55V 12A D2PAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Drain to Source Voltage (Vdss): 55V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Packaging: Tube
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Detailed Description: P-Channel 55V 12A (Tc) 3.8W (Ta), 45W (Tc) Surface Mount D2PAK
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: P-Channel
Series: HEXFET®
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Other Names: *IRF9Z24NS
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 175 mOhm @ 7.2A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Related Parts For IRF9Z24NS
IRF9014

International Rectifier

TO-252

IRF901D1

International Rectifier

SOP-8

IRF901D1TRPBF

International Rectifier

SOP-8

IRF9024

International Rectifier

TO-252

IRF9120

International Rectifier

TO-3

IRF9123

International Rectifier

TO-3P

IRF9133

International Rectifier

AUTOMOTIVE HEXFET P-CHANNEL POWE

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!