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Drain to Source Voltage (Vdss): | 200V |
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Power Dissipation (Max): | 3.8W (Ta), 170W (Tc) |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Packaging: | Tube |
Supplier Device Package: | TO-220AB |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Detailed Description: | N-Channel 200V 24A (Tc) 3.8W (Ta), 170W (Tc) Through Hole TO-220AB |
FET Feature: | - |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Email: | [email protected] |
FET Type: | N-Channel |
Series: | HEXFET® |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Other Names: | *IRFB23N20D |
Input Capacitance (Ciss) (Max) @ Vds: | 1960pF @ 25V |
Vgs (Max): | ±30V |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 14A, 10V |
Technology: | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 10V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
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