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IRFB23N20D
the part number is IRFB23N20D
Part
IRFB23N20D
Manufacturer
Description
MOSFET N-CH 200V 24A TO-220AB
Lead Free/ROHS
pb RoHs
Datasheets
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Specification
Drain to Source Voltage (Vdss): 200V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Package / Case: TO-220-3
Mounting Type: Through Hole
Packaging: Tube
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Detailed Description: N-Channel 200V 24A (Tc) 3.8W (Ta), 170W (Tc) Through Hole TO-220AB
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: N-Channel
Series: HEXFET®
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Other Names: *IRFB23N20D
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Operating Temperature: -55°C ~ 175°C (TJ)
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