shengyuic
shengyuic
IRFB4410
the part number is IRFB4410
Part
IRFB4410
Manufacturer
Description
MOSFET N-CH 100V 96A TO-220AB
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Drain to Source Voltage (Vdss): 100V
Power Dissipation (Max): 250W (Tc)
Package / Case: TO-220-3
Mounting Type: Through Hole
Packaging: Tube
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 150µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Detailed Description: N-Channel 100V 96A (Tc) 250W (Tc) Through Hole TO-220AB
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: N-Channel
Series: HEXFET®
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Other Names: *IRFB4410
Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 10 mOhm @ 58A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Related Parts For IRFB4410
IRFB1104

International Rectifier

TO220

IRFB11N50A

Vishay

MOSFET N-CH 500V 11A TO-220AB

IRFB11N50A

Vishay Siliconix

MOSFET N-CH 500V 11A TO220AB

IRFB11N50APBF

Vishay

MOSFET N-CH 500V 11A TO-220AB

IRFB11N50APBF

Infineon Technologies

MOSFET N-CH 500V 11A TO220AB

IRFB11N50APBF

Vishay Siliconix

MOSFET N-CH 500V 11A TO220AB

IRFB11N50APBF-BE3

Vishay Siliconix

MOSFET N-CH 500V 11A TO220AB

IRFB11N50L

International Rectifier

TO220

IRFB13N50A

Vishay

MOSFET N-CH 500V 14A TO-220AB

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!