1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 4V @ 250µA |
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Vgs(th)(Max)@Id | ±20V |
Vgs | 11 nC @ 10 V |
FETFeature | 1.3W (Ta) |
DraintoSourceVoltage(Vdss) | 60 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | 4-HVMDIP |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | 4-DIP (0.300, 7.62mm) |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 1.7A (Ta) |
Vgs(Max) | 310 pF @ 25 V |
MinRdsOn) | 200mOhm @ 1A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
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