shengyuic
shengyuic
IRFR9N20DTRR
the part number is IRFR9N20DTRR
Part
IRFR9N20DTRR
Manufacturer
Description
MOSFET N-CH 200V 9.4A DPAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Drain to Source Voltage (Vdss): 200V
Power Dissipation (Max): 86W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Detailed Description: N-Channel 200V 9.4A (Tc) 86W (Tc) Surface Mount D-Pak
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: N-Channel
Series: HEXFET®
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.6A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Related Parts For IRFR9N20DTRR
IRFR010

Vishay Siliconix

MOSFET N-CH 50V 8.2A DPAK

IRFR010PBF

Vishay Siliconix

MOSFET N-CH 50V 8.2A DPAK

IRFR010PBF-BE3

Vishay Siliconix

MOSFET N-CH 50V 8.2A DPAK

IRFR010TF

International Rectifier

TO-252

IRFR010TR

Vishay Siliconix

MOSFET N-CH 50V 8.2A DPAK

IRFR010TRL

Vishay Siliconix

MOSFET N-CH 50V 8.2A DPAK

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!