shengyuic
shengyuic
IRFSL17N20D
the part number is IRFSL17N20D
Part
IRFSL17N20D
Manufacturer
Description
MOSFET N-CH 200V 16A TO-262
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $5.0 $4.9 $4.75 $4.6 $4.4 Get Quotation!
Specification
Drain to Source Voltage (Vdss): 200V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Packaging: Tube
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Detailed Description: N-Channel 200V 16A (Tc) 3.8W (Ta), 140W (Tc) Through Hole TO-262
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: N-Channel
Series: HEXFET®
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Other Names: *IRFSL17N20D
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 170 mOhm @ 9.8A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Related Parts For IRFSL17N20D
IRFS11N50A

Vishay

MOSFET N-CH 500V 11A D2PAK

IRFS11N50A

Vishay Siliconix

MOSFET N-CH 500V 11A D2PAK

IRFS11N50APBF

Vishay

MOSFET N-CH 500V 11A D2PAK

IRFS11N50APBF

Vishay Siliconix

MOSFET N-CH 500V 11A D2PAK

IRFS11N50ATRL

Vishay Siliconix

MOSFET N-CH 500V 11A D2PAK

IRFS11N50ATRLP

Vishay Siliconix

MOSFET N-CH 500V 11A TO263AB

IRFS11N50ATRLPBF

International Rectifier

D2-PAK

IRFS11N50ATRR

Vishay Siliconix

MOSFET N-CH 500V 11A D2PAK

IRFS11N50ATRRP

Vishay Siliconix

MOSFET N-CH 500V 11A D2PAK

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!