1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 2.25V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 35 nC @ 4.5 V |
FETFeature | 110W (Tc) |
DraintoSourceVoltage(Vdss) | 30 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 4.5V, 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | TO-220AB |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | TO-220-3 |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 105A (Tc) |
Vgs(Max) | 2840 pF @ 15 V |
MinRdsOn) | 6mOhm @ 21A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
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