| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $3.8796 | $3.802 | $3.6856 | $3.5692 | $3.414 | Get Quotation! |
| RdsOn(Max)@Id | 2.5V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 162 nC @ 4.5 V |
| FETFeature | 375W (Tc) |
| DraintoSourceVoltage(Vdss) | 40 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 4.5V, 10V |
| ProductStatus | Not For New Designs |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | TO-220AB |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | HEXFET® |
| Qualification | |
| SupplierDevicePackage | TO-220-3 |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 195A (Tc) |
| Vgs(Max) | 10315 pF @ 25 V |
| MinRdsOn) | 1.7mOhm @ 195A, 10V |
| Package | Tube |
| PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
Infineon
Dissipation Pd:380W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V
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