| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | 1V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | - |
| Vgs | ±20V |
| FETFeature | Surface Mount |
| DraintoSourceVoltage(Vdss) | 30 V |
| OperatingTemperature | TO-236-3, SC-59, SOT-23-3 |
| DriveVoltage(MaxRdsOn | - |
| ProductStatus | Obsolete |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | 5 nC @ 10 V |
| InputCapacitance(Ciss)(Max)@Vds | -55°C ~ 150°C (TJ) |
| Series | HEXFET® |
| Qualification | |
| SupplierDevicePackage | 85 pF @ 25 V |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 1.2A (Ta) |
| Vgs(Max) | 540mW (Ta) |
| MinRdsOn) | 250mOhm @ 910mA, 10V |
| Package | Tape & Reel (TR) |
| PowerDissipation(Max) | Micro3™/SOT-23 |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!