| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Drain to Source Voltage (Vdss): | 20V |
|---|---|
| Power Dissipation (Max): | 540mW (Ta) |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type: | Surface Mount |
| Packaging: | Cut Tape (CT) |
| Supplier Device Package: | Micro3™/SOT-23 |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Detailed Description: | P-Channel 20V 780mA (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23 |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Email: | [email protected] |
| FET Type: | P-Channel |
| Series: | HEXFET® |
| Current - Continuous Drain (Id) @ 25°C: | 780mA (Ta) |
| Other Names: | *IRLML6302TR IRLML6302 IRLML6302-ND IRLML6302CT |
| Input Capacitance (Ciss) (Max) @ Vds: | 97pF @ 15V |
| Vgs (Max): | ±12V |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 610mA, 4.5V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 3.6nC @ 4.45V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
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