| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $7.8396 | $7.6828 | $7.4476 | $7.2124 | $6.8988 | Get Quotation! |
| RdsOn(Max)@Id | 5.5V @ 2.5mA |
|---|---|
| Vgs(th)(Max)@Id | ±30V |
| Vgs | 63 nC @ 10 V |
| FETFeature | 540W (Tc) |
| DraintoSourceVoltage(Vdss) | 850 V |
| OperatingTemperature | - |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Active |
| Package/Case | TO-263HV |
| GateCharge(Qg)(Max)@Vgs | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Grade | |
| MountingType | - |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | HiPerFET™, Ultra X |
| Qualification | |
| SupplierDevicePackage | Surface Mount |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 20A (Tc) |
| Vgs(Max) | 1660 pF @ 25 V |
| MinRdsOn) | 330mOhm @ 500mA, 10V |
| Package | Tube |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!