1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $11.6256 | $11.3931 | $11.0443 | $10.6956 | $10.2305 | Get Quotation! |
RdsOn(Max)@Id | 5.5V @ 4mA |
---|---|
Vgs(th)(Max)@Id | ±30V |
Vgs | 75 nC @ 10 V |
FETFeature | 660W (Tc) |
DraintoSourceVoltage(Vdss) | 650 V |
OperatingTemperature | - |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Active |
Package/Case | TO-247 (IXTH) |
GateCharge(Qg)(Max)@Vgs | TO-247-3 |
Grade | |
MountingType | - |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | HiPerFET™, Ultra X2 |
Qualification | |
SupplierDevicePackage | Through Hole |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 46A (Tc) |
Vgs(Max) | 4810 pF @ 25 V |
MinRdsOn) | 76mOhm @ 23A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!