1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 4.5V @ 8mA |
---|---|
Vgs(th)(Max)@Id | ±30V |
Vgs | 190 nC @ 10 V |
FETFeature | 416W (Tc) |
DraintoSourceVoltage(Vdss) | 800 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Active |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | ISOPLUS247™ |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | HiPerFET™, Q2 Class |
Qualification | |
SupplierDevicePackage | TO-247-3 |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 28A (Tc) |
Vgs(Max) | 8340 pF @ 25 V |
MinRdsOn) | 240mOhm @ 19A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!