shengyuic
shengyuic
IXFT50N20
the part number is IXFT50N20
Part
IXFT50N20
Manufacturer
Description
MOSFET N-CH 200V 50A TO268
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 4V @ 4mA
Vgs(th)(Max)@Id ±20V
Vgs 220 nC @ 10 V
FETFeature 300W (Tc)
DraintoSourceVoltage(Vdss) 200 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 10V
ProductStatus Last Time Buy
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType TO-268AA
InputCapacitance(Ciss)(Max)@Vds -
Series HiPerFET™
Qualification
SupplierDevicePackage TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 50A (Tc)
Vgs(Max) 4400 pF @ 25 V
MinRdsOn) 45mOhm @ 25A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For IXFT50N20
IXFT100N30X3HV

IXYS

MOSFET N-CH 300V 100A TO268HV

IXFT10N100

IXYS

MOSFET N-CH 1000V 10A TO268

IXFT120N15P

IXYS

MOSFET N-CH 150V 120A TO268

IXFT120N25X3HV

IXYS

MOSFET N-CH 250V 120A TO268HV

IXFT120N30X3HV

IXYS

MOSFET N-CH 300V 120A TO268HV

IXFT12N100

IXYS

MOSFET N-CH 1000V 12A TO268

IXFT12N100F

IXYS

MOSFET N-CH 1000V 12A TO268

IXFT12N100Q

IXYS

MOSFET N-CH 1000V 12A TO268

IXFT12N50F

IXYS

MOSFET N-CH 12A TO268

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!