| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $7.788 | $7.6322 | $7.3986 | $7.165 | $6.8534 | Get Quotation! |
| RdsOn(Max)@Id | 5V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±30V |
| Vgs | 113 nC @ 10 V |
| FETFeature | 660W (Tc) |
| DraintoSourceVoltage(Vdss) | 650 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Last Time Buy |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-247 (IXTH) |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | Ultra X |
| Qualification | |
| SupplierDevicePackage | TO-247-3 |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 52A (Tc) |
| Vgs(Max) | 4350 pF @ 25 V |
| MinRdsOn) | 68mOhm @ 26A, 10V |
| Package | Tube |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!