shengyuic
shengyuic
IXTH88N30P
the part number is IXTH88N30P
Part
IXTH88N30P
Manufacturer
Description
MOSFET N-CH 300V 88A TO247
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $12.1503 $11.9073 $11.5428 $11.1783 $10.6923 Get Quotation!
Specification
RdsOn(Max)@Id 5V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 180 nC @ 10 V
FETFeature 600W (Tc)
DraintoSourceVoltage(Vdss) 300 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-247 (IXTH)
InputCapacitance(Ciss)(Max)@Vds -
Series Polar
Qualification
SupplierDevicePackage TO-247-3
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 88A (Tc)
Vgs(Max) 6300 pF @ 25 V
MinRdsOn) 40mOhm @ 44A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For IXTH88N30P
IXTH02N250

IXYS

MOSFET N-CH 2500V 200MA TO247

IXTH02N450HV

IXYS

MOSFET N-CH 4500V 200MA TO247HV

IXTH04N300P3HV

IXYS

MOSFET N-CH 3000V 400MA TO247HV

IXTH05N250P3HV

IXYS

MOSFET N-CH 2200V 600MA TO247HV

IXTH06N220P3HV

IXYS

MOSFET N-CH 2200V 600MA TO247HV

IXTH102N15T

IXYS

MOSFET N-CH 150V 102A TO247

IXTH102N20T

IXYS

MOSFET N-CH 200V 102A TO247

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!