shengyuic
shengyuic
JAN1N5615
the part number is JAN1N5615
Part
JAN1N5615
Manufacturer
Description
DIODE GEN PURP 200V 2A AXIAL
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $5.016 $4.9157 $4.7652 $4.6147 $4.4141 Get Quotation!
Specification
Current-ReverseLeakage@Vr Through Hole
Speed 500 nA @ 200 V
F Axial
ProductStatus Discontinued at Digi-Key
Package/Case 200 V
Grade MIL-PRF-19500/429
Capacitance@Vr Axial
ReverseRecoveryTime(trr) 27pF @ 5V, 1MHz
MountingType -65°C ~ 175°C
Series -
Qualification
SupplierDevicePackage 150 ns
Voltage-Forward(Vf)(Max)@If Fast Recovery =< 500ns, > 200mA (Io)
Technology Standard
Voltage-DCReverse(Vr)(Max) 2A
OperatingTemperature-Junction Military
Current-AverageRectified(Io) 1.2 V @ 1 A
Package Bulk
Related Parts For JAN1N5615
JAN1N1124A

Microchip Technology

DIODE GEN PURP 200V DO203AA

JAN1N1124RA

Microchip Technology

DIODE GEN PURP 200V DO203AA

JAN1N1126A

Microchip Technology

DIODE GEN PURP 400V DO203AA

JAN1N1126RA

Microchip Technology

DIODE GEN PURP 400V DO203AA

JAN1N1128A

Microchip Technology

DIODE GEN PURP 600V DO203AA

JAN1N1184

Microchip Technology

DIODE GEN PURP 100V 35A DO5

JAN1N1184R

Microchip Technology

DIODE GEN PURP 100V 35A DO5

JAN1N1186

Microchip Technology

DIODE GEN PURP 200V 35A DO5

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!