shengyuic
shengyuic
JANTXV1N5807US
the part number is JANTXV1N5807US
Part
JANTXV1N5807US
Manufacturer
Description
DIODE GEN PURP 50V 6A
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Current-ReverseLeakage@Vr 60pF @ 5V, 1MHz
Speed Fast Recovery =< 500ns, > 200mA (Io)
F SQ-MELF
ProductStatus Discontinued at Digi-Key
Package/Case -
Grade MIL-PRF-19500/477
Capacitance@Vr Surface Mount
ReverseRecoveryTime(trr) 5 µA @ 50 V
MountingType -
Series -
Qualification
SupplierDevicePackage 30 ns
Voltage-Forward(Vf)(Max)@If 875 mV @ 4 A
Technology Standard
Voltage-DCReverse(Vr)(Max) 50 V
OperatingTemperature-Junction Military
Current-AverageRectified(Io) 6A
Package Bulk
Related Parts For JANTXV1N5807US
JANTV2N6437

Microchip Technology

POWER BJT

JANTV2N6546

Microchip Technology

POWER BJT

JANTX1N1184

Microchip Technology

DIODE GEN PURP 100V 35A DO5

JANTX1N1184R

Microchip Technology

DIODE GEN PURP 100V 35A DO5

JANTX1N1186

Microchip Technology

DIODE GEN PURP 200V 35A DO5

JANTX1N1186R

Microchip Technology

SILICON RECTIFIER

JANTX1N1188

Microchip Technology

DIODE GEN PURP REV 400V 35A DO5

JANTX1N1188R

Microchip Technology

DIODE GEN PURP 400V 35A DO5

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!