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MCP55H12-BP
the part number is MCP55H12-BP
Part
MCP55H12-BP
Manufacturer
Description
MOSFET N-CH
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id -
Vgs ±20V
FETFeature Through Hole
DraintoSourceVoltage(Vdss) 55 V
OperatingTemperature TO-220-3
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 125 nC @ 10 V
InputCapacitance(Ciss)(Max)@Vds -55°C ~ 150°C (TJ)
Series -
Qualification
SupplierDevicePackage 4900 pF @ 25 V
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 120A
Vgs(Max) -
MinRdsOn) 5.5mOhm @ 40A, 10V
Package Tube
PowerDissipation(Max) TO-220AB
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Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!