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MCW200N10Y-TP
the part number is MCW200N10Y-TP
Part
MCW200N10Y-TP
Manufacturer
Description
MOSFET N-CH 200A
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id -
Vgs ±20V
FETFeature Through Hole
DraintoSourceVoltage(Vdss) 100 V
OperatingTemperature TO-247-3
DriveVoltage(MaxRdsOn 6V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 237 nC @ 10 V
InputCapacitance(Ciss)(Max)@Vds -55°C ~ 150°C (TJ)
Series -
Qualification
SupplierDevicePackage 13310 pF @ 50 V
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 200A
Vgs(Max) 312W
MinRdsOn) 2.1mOhm @ 20A, 10V
Package Tape & Reel (TR)
PowerDissipation(Max) TO-247-3
Related Parts For MCW200N10Y-TP
MCW200N10Y-TP

Micro Commercial Co

MOSFET N-CH 200A

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!