shengyuic
shengyuic
NSB8KTHM3/I
the part number is NSB8KTHM3/I
Part
NSB8KTHM3/I
Description
DIODE GEN PURP 800V 8A TO263AB
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Current-ReverseLeakage@Vr 55pF @ 4V, 1MHz
Speed Standard Recovery >500ns, > 200mA (Io)
F TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
ProductStatus Active
Package/Case -55°C ~ 150°C
Grade -
Capacitance@Vr Surface Mount
ReverseRecoveryTime(trr) 10 µA @ 800 V
MountingType TO-263AB (D2PAK)
Series -
Qualification
SupplierDevicePackage Automotive
Voltage-Forward(Vf)(Max)@If 1.1 V @ 8 A
Technology Standard
Voltage-DCReverse(Vr)(Max) 800 V
OperatingTemperature-Junction AEC-Q101
Current-AverageRectified(Io) 8A
Package Tape & Reel (TR)
Related Parts For NSB8KTHM3/I
NSB8AT-E3/45

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 8A TO263AB

NSB8AT-E3/81

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 8A TO263AB

NSB8ATHE3_B/I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 8A TO263AB

NSB8ATHE3_B/P

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 8A TO263AB

NSB8BT-E3/45

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 8A TO263AB

NSB8BT-E3/81

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 8A TO263AB

NSB8BTHE3_B/I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 8A TO263AB

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!