1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 4.3V @ 20mA |
---|---|
Vgs(th)(Max)@Id | +25V, -15V |
Vgs | 203 nC @ 20 V |
FETFeature | 535W (Tc) |
DraintoSourceVoltage(Vdss) | 1200 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 20V |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | Die |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | Die |
FETType | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Current-ContinuousDrain(Id)@25°C | 103A (Tc) |
Vgs(Max) | 2890 pF @ 800 V |
MinRdsOn) | 28mOhm @ 60A, 20V |
Package | Tray |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
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