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NTC080N120SC1
the part number is NTC080N120SC1
Part
NTC080N120SC1
Manufacturer
Description
SIC MOS WAFER SALES 80MOHM 1200V
Lead Free/ROHS
pb RoHs
Datasheets
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Specification
RdsOn(Max)@Id 4.3V @ 5mA
Vgs(th)(Max)@Id +25V, -15V
Vgs 56 nC @ 20 V
FETFeature 178W (Tc)
DraintoSourceVoltage(Vdss) 1200 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 20V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType Die
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage Die
FETType N-Channel
Technology SiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C 31A (Tc)
Vgs(Max) 1112 pF @ 800 V
MinRdsOn) 110mOhm @ 20A, 20V
Package Tray
PowerDissipation(Max) -55°C ~ 175°C (TJ)
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