| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $30.996 | $30.3761 | $29.4462 | $28.5163 | $27.2765 | Get Quotation! |
| RdsOn(Max)@Id | 4.4V @ 20mA |
|---|---|
| Vgs(th)(Max)@Id | 3130 pF @ 800 V |
| Vgs | 139 nC @ 18 V |
| FETFeature | -55°C ~ 175°C (TJ) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| OperatingTemperature | - |
| DriveVoltage(MaxRdsOn | 18V |
| ProductStatus | Active |
| Package/Case | TO-247-3 |
| GateCharge(Qg)(Max)@Vgs | +22V, -10V |
| Grade | |
| MountingType | Through Hole |
| InputCapacitance(Ciss)(Max)@Vds | 352W (Tc) |
| Series | - |
| Qualification | |
| SupplierDevicePackage | TO-247-3 |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Current-ContinuousDrain(Id)@25°C | 68A (Tc) |
| Vgs(Max) | - |
| MinRdsOn) | 30mOhm @ 40A, 18V |
| Package | Tube |
| PowerDissipation(Max) | - |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!