1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $26.4992 | $25.9692 | $25.1742 | $24.3793 | $23.3193 | Get Quotation! |
RdsOn(Max)@Id | 4.3V @ 15.5mA |
---|---|
Vgs(th)(Max)@Id | 3480 pF @ 325 V |
Vgs | 164 nC @ 18 V |
FETFeature | -55°C ~ 175°C (TJ) |
DraintoSourceVoltage(Vdss) | 650 V |
OperatingTemperature | - |
DriveVoltage(MaxRdsOn | 15V, 18V |
ProductStatus | Active |
Package/Case | TO-247-3 |
GateCharge(Qg)(Max)@Vgs | +22V, -8V |
Grade | |
MountingType | Through Hole |
InputCapacitance(Ciss)(Max)@Vds | 348W (Tc) |
Series | - |
Qualification | |
SupplierDevicePackage | TO-247-3 |
FETType | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Current-ContinuousDrain(Id)@25°C | 99A (Tc) |
Vgs(Max) | - |
MinRdsOn) | 28.5mOhm @ 45A, 18V |
Package | Tube |
PowerDissipation(Max) | - |
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