shengyuic
shengyuic
PJD1NA60A_R2_00001
the part number is PJD1NA60A_R2_00001
Part
PJD1NA60A_R2_00001
Description
600V N-CHANNEL MOSFET
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±30V
Vgs 3.1 nC @ 10 V
FETFeature -
DraintoSourceVoltage(Vdss) 600 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-252
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage TO-252-3, DPak (2 Leads + Tab), SC-63
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C -
Vgs(Max) 148 pF @ 25 V
MinRdsOn) 7.9Ohm @ 500mA, 10V
Package Tape & Reel (TR)
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For PJD1NA60A_R2_00001
PJD100N04-AU_L2_000A1

Panjit International Inc.

40V N-CHANNEL ENHANCEMENT MODE M

PJD100N04_L2_00001

Panjit International Inc.

40V N-CHANNEL ENHANCEMENT MODE M

PJD100P03_L2_00001

Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

PJD10N10_L2_00001

Panjit International Inc.

100V N-CHANNEL MOSFET

PJD10P10A_L2_00001

Panjit International Inc.

100V P-CHANNEL MOSFET

PJD11N06A-AU_L2_000A1

Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

PJD11N06A_L2_00001

Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!