shengyuic
shengyuic
PJD35P03_L2_00001
the part number is PJD35P03_L2_00001
Part
PJD35P03_L2_00001
Description
30V P-CHANNEL ENHANCEMENT MODE M
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.6783 $0.6647 $0.6444 $0.624 $0.5969 Get Quotation!
Specification
RdsOn(Max)@Id 2.5V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 11 nC @ 4.5 V
FETFeature 2W (Ta), 35W (Tc)
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-252
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage TO-252-3, DPak (2 Leads + Tab), SC-63
FETType P-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 8.4A (Ta), 35A (Tc)
Vgs(Max) 1169 pF @ 15 V
MinRdsOn) 19mOhm @ 8A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For PJD35P03_L2_00001
PJD30N15_L2_00001

Panjit International Inc.

150V N-CHANNEL ENHANCEMENT MODE

PJD35N06A-AU_L2_000A1

Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

PJD35N06A_L2_00001

Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

PJD35P03_L2_00001

Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

PJD3NA50_L2_00001

Panjit International Inc.

500V N-CHANNEL MOSFET

PJD3NA80_L2_00001

Panjit International Inc.

800V N-CHANNEL MOSFET

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!