shengyuic
shengyuic
PJD4NA60_L2_00001
the part number is PJD4NA60_L2_00001
Part
PJD4NA60_L2_00001
Description
600V N-CHANNEL MOSFET
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.9718 $0.9524 $0.9232 $0.8941 $0.8552 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±30V
Vgs 11.1 nC @ 10 V
FETFeature 77W (Tc)
DraintoSourceVoltage(Vdss) 600 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 10V
ProductStatus Not For New Designs
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-252
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage TO-252-3, DPak (2 Leads + Tab), SC-63
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 4A (Ta)
Vgs(Max) 450 pF @ 25 V
MinRdsOn) 2.4Ohm @ 2A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For PJD4NA60_L2_00001
PJD40N04-AU_L2_000A1

Panjit International Inc.

40V N-CHANNEL ENHANCEMENT MODE M

PJD40N04_L2_00001

Panjit International Inc.

40V N-CHANNEL ENHANCEMENT MODE M

PJD40N06A-AU_L2_000A1

Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

PJD40N06A_L2_00001

Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

PJD40N15_L2_00001

Panjit International Inc.

150V N-CHANNEL ENHANCEMENT MODE

PJD40P03E-AU_L2_006A1

Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

PJD45N03_L2_00001

Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

PJD45N06A-AU_L2_000A1

Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

PJD45N06A_L2_00001

Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!