1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $0.9612 | $0.942 | $0.9131 | $0.8843 | $0.8459 | Get Quotation! |
RdsOn(Max)@Id | 4V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 40 nC @ 10 V |
FETFeature | 184W (Tc) |
DraintoSourceVoltage(Vdss) | 600 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Not For New Designs |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-220AB |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | TO-220-3 |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 1.7A (Ta), 15A (Tc) |
Vgs(Max) | 1013 pF @ 25 V |
MinRdsOn) | 290mOhm @ 6.5A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!