shengyuic
shengyuic
PJQ1906_R1_00201
the part number is PJQ1906_R1_00201
Part
PJQ1906_R1_00201
Description
20V N-CHANNEL ENHANCEMENT MODE M
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.0714 $0.07 $0.0678 $0.0657 $0.0628 Get Quotation!
Specification
RdsOn(Max)@Id 1V @ 250µA
Vgs(th)(Max)@Id ±10V
Vgs 0.9 nC @ 4.5 V
FETFeature 700mW (Ta)
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 1.2V, 4.5V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType DFN1006-3
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage 3-UFDFN
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 300mA (Ta)
Vgs(Max) 45 pF @ 10 V
MinRdsOn) 1.2Ohm @ 300mA, 4.5V
Package Tape & Reel (TR)
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For PJQ1906_R1_00201
PJQ1820_R1_00001

Panjit International Inc.

MOSFET 2N-CH 20V 0.8A 6DFN

PJQ1821_R1_00001

Panjit International Inc.

MOSFET 2P-CH 20V 0.6A 6DFN

PJQ1902_R1_00001

Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

PJQ1906_R1_00001

Panjit International Inc.

MOSFET N-CH 30V 300MA DFN-3L

PJQ1906_R1_00201

Panjit International Inc.

20V N-CHANNEL ENHANCEMENT MODE M

PJQ1916_R1_00001

Panjit International Inc.

20V N-CHANNEL ENHANCEMENT MODE M

PJQ1916_R1_00201

Panjit International Inc.

20V N-CHANNEL ENHANCEMENT MODE M

PJQ1917_R1_00001

Panjit International Inc.

20V P-CHANNEL ENHANCEMENT MODE M

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!