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RQ3E100BNTB
the part number is RQ3E100BNTB
Part
RQ3E100BNTB
Manufacturer
Description
MOSFET N-CH 30V 10A HSMT8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
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Uni Price $0.4387 $0.4299 $0.4168 $0.4036 $0.3861 Get Quotation!
Specification
Drain to Source Voltage (Vdss): 30V
Power Dissipation (Max): 2W (Ta)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-HSMT (3.2x3)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 30V 10A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Manufacturer Standard Lead Time: 40 Weeks
Email: [email protected]
FET Type: N-Channel
Series: -
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Other Names: RQ3E100BNTBTR
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 10A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Operating Temperature: 150°C (TJ)
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