1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $0.3024 | $0.2964 | $0.2873 | $0.2782 | $0.2661 | Get Quotation! |
RdsOn(Max)@Id | 2.3V @ 1mA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | - |
FETFeature | 200mW (Ta) |
DraintoSourceVoltage(Vdss) | 60 V |
OperatingTemperature | - |
DriveVoltage(MaxRdsOn | 2.5V, 10V |
ProductStatus | Not For New Designs |
Package/Case | UMT3 |
GateCharge(Qg)(Max)@Vgs | SC-70, SOT-323 |
Grade | |
MountingType | - |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | Surface Mount |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 250mA (Ta) |
Vgs(Max) | 15 pF @ 25 V |
MinRdsOn) | 2.4Ohm @ 250mA, 10V |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
PowerDissipation(Max) | 150°C (TJ) |
ROHM
Small Signal Field-Effect Transistor, 0.25A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, UMT3, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!