| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.5148 | $0.5045 | $0.4891 | $0.4736 | $0.453 | Get Quotation! |
| Drain to Source Breakdown Voltage | -30 V |
|---|---|
| Gate to Source Voltage (Vgs) | 20 V |
| Mount | Surface Mount |
| Current Rating | -200 mA |
| Fall Time | 5 ns |
| Turn-On Delay Time | 8 ns |
| RoHS | Compliant |
| Radiation Hardening | No |
| Resistance | 2.4 Ω |
| Drain to Source Voltage (Vdss) | 30 V |
| Power Dissipation | 200 mW |
| Drain to Source Resistance | 1.6 Ω |
| Continuous Drain Current (ID) | 250 mA |
| Element Configuration | Single |
| Rise Time | 5 ns |
| Turn-Off Delay Time | 30 ns |
| Contact Plating | Copper, Silver, Tin |
| Packaging | Cut Tape (CT) |
| Number of Pins | 3 |
| Input Capacitance | 30 pF |
| Voltage Rating (DC) | -30 V |
| Lead Free | Lead Free |
| Rds On Max | 1.4 Ω |
| Max Power Dissipation | 200 mW |
ROHM
Small Signal Field-Effect Transistor, 0.25A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, UMT3, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!