shengyuic
shengyuic
RUC002N05T116
the part number is RUC002N05T116
Part
RUC002N05T116
Manufacturer
Description
MOSFET N-CH 50V 0.2A SST3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.3255 $0.319 $0.3092 $0.2995 $0.2864 Get Quotation!
Specification
Drain to Source Voltage (Vdss): 50V
Power Dissipation (Max): 200mW (Ta)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Packaging: Original-Reel®
Supplier Device Package: SST3
Vgs(th) (Max) @ Id: 1V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 50V 200mA (Ta) 200mW (Ta) Surface Mount SST3
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Manufacturer Standard Lead Time: 10 Weeks
Email: [email protected]
FET Type: N-Channel
Series: -
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Other Names: RUC002N05T116DKR
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Related Parts For RUC002N05T116
RUC002N05HZGT116

Rohm Semiconductor

MOSFET N-CH 50V 200MA SST3

RUC002N05T116

LAPIS Semiconductor

MOSFET N-CH 50V 0.2A SST3

RUC002N05T116

Rohm Semiconductor

MOSFET N-CH 50V 200MA SST3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!