shengyuic
shengyuic
SCT055HU65G3AG
the part number is SCT055HU65G3AG
Part
SCT055HU65G3AG
Manufacturer
Description
AUTOMOTIVE-GRADE SILICON CARBIDE
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $13.1076 $12.8454 $12.4522 $12.059 $11.5347 Get Quotation!
Specification
RdsOn(Max)@Id 4.2V @ 1mA
Vgs(th)(Max)@Id 721 pF @ 400 V
Vgs +22V, -10V
FETFeature -55°C ~ 175°C (TJ)
DraintoSourceVoltage(Vdss) 650 V
OperatingTemperature HU3PAK
DriveVoltage(MaxRdsOn 15V, 18V
ProductStatus Active
Package/Case Automotive
GateCharge(Qg)(Max)@Vgs AEC-Q101
Grade
MountingType TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
InputCapacitance(Ciss)(Max)@Vds 185W (Tc)
Series -
Qualification
SupplierDevicePackage 29 nC @ 18 V
FETType N-Channel
Technology SiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C 30A (Tc)
Vgs(Max) -
MinRdsOn) 72mOhm @ 15A, 18V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) Surface Mount
Related Parts For SCT055HU65G3AG
SCT011H75G3AG

STMicroelectronics

MOSFET 750 V 110A H2PAK7

SCT040H65G3AG

STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE

SCT040HU65G3AG

STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE

SCT055HU65G3AG

STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE

SCT060HU75G3AG

STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!