| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $5.768 | $5.6526 | $5.4796 | $5.3066 | $5.0758 | Get Quotation! |
| Drain to Source Voltage (Vdss): | 1700V |
|---|---|
| Power Dissipation (Max): | 35W (Tc) |
| Package / Case: | TO-3PFM, SC-93-3 |
| Mounting Type: | Through Hole |
| Packaging: | Tube |
| Supplier Device Package: | TO-3PFM |
| Vgs(th) (Max) @ Id: | 4V @ 900µA |
| Drive Voltage (Max Rds On, Min Rds On): | 18V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | N-Channel 1700V 3.7A (Tc) 35W (Tc) Through Hole TO-3PFM |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Email: | [email protected] |
| FET Type: | N-Channel |
| Series: | - |
| Current - Continuous Drain (Id) @ 25°C: | 3.7A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds: | 184pF @ 800V |
| Vgs (Max): | +22V, -6V |
| Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 1.1A, 18V |
| Technology: | SiCFET (Silicon Carbide) |
| Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 18V |
| Operating Temperature: | 175°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!