1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $136.4892 | $133.7594 | $129.6647 | $125.5701 | $120.1105 | Get Quotation! |
RdsOn(Max)@Id | 5.6V @ 18.2mA |
---|---|
Vgs(th)(Max)@Id | +22V, -4V |
Vgs | 178 nC @ 18 V |
FETFeature | 427W |
DraintoSourceVoltage(Vdss) | 1200 V |
OperatingTemperature | Automotive |
DriveVoltage(MaxRdsOn | 18V |
ProductStatus | Active |
Package/Case | TO-247N |
GateCharge(Qg)(Max)@Vgs | TO-247-3 |
Grade | |
MountingType | AEC-Q101 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | Through Hole |
FETType | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Current-ContinuousDrain(Id)@25°C | 95A (Tc) |
Vgs(Max) | 2879 pF @ 800 V |
MinRdsOn) | 28.6mOhm @ 36A, 18V |
Package | Tube |
PowerDissipation(Max) | 175°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!