| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $35.2401 | $34.5353 | $33.4781 | $32.4209 | $31.0113 | Get Quotation! |
| RdsOn(Max)@Id | 4.8V @ 30.8mA |
|---|---|
| Vgs(th)(Max)@Id | +21V, -4V |
| Vgs | 170 nC @ 18 V |
| FETFeature | 312W |
| DraintoSourceVoltage(Vdss) | 750 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 18V |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-247N |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | - |
| Qualification | |
| SupplierDevicePackage | TO-247-3 |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Current-ContinuousDrain(Id)@25°C | 105A (Tj) |
| Vgs(Max) | 4580 pF @ 500 V |
| MinRdsOn) | 16.9mOhm @ 58A, 18V |
| Package | Tube |
| PowerDissipation(Max) | 175°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!