1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $41.12 | $40.2976 | $39.064 | $37.8304 | $36.1856 | Get Quotation! |
RdsOn(Max)@Id | 4.8V @ 22.2mA |
---|---|
Vgs(th)(Max)@Id | 4532 pF @ 800 V |
Vgs | 170 nC @ 18 V |
FETFeature | 175°C (TJ) |
DraintoSourceVoltage(Vdss) | 1200 V |
OperatingTemperature | - |
DriveVoltage(MaxRdsOn | 18V |
ProductStatus | Active |
Package/Case | TO-247-4 |
GateCharge(Qg)(Max)@Vgs | +21V, -4V |
Grade | |
MountingType | Through Hole |
InputCapacitance(Ciss)(Max)@Vds | 312W |
Series | - |
Qualification | |
SupplierDevicePackage | TO-247-4L |
FETType | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Current-ContinuousDrain(Id)@25°C | 81A (Tc) |
Vgs(Max) | - |
MinRdsOn) | 23.4mOhm @ 42A, 18V |
Package | Tube |
PowerDissipation(Max) | - |
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