1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
Reverse Breakdown Voltage | 5 V |
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Min Operating Temperature | -40 °C |
Response Time | 17 µs |
Sensing Distance | 5.207 mm |
Mount | Surface Mount |
Output Configuration | Phototransistor |
Fall Time | 17 µs |
RoHS | Compliant |
Radiation Hardening | No |
Number of Channels | 1 |
Number of Pins | 4 |
Height | 10.2 mm |
Number of Elements | 1 |
Collector Emitter Breakdown Voltage | 30 V |
Width | 13.66 mm |
Forward Current | 60 mA |
Collector Emitter Voltage (VCEO) | 70 V |
Wavelength | 940 nm |
Max Collector Current | 50 mA |
Max Operating Temperature | 85 °C |
Power Dissipation | 100 mW |
Rise Time | 13 µs |
Length | 6.2 mm |
Contact Plating | Tin |
Case/Package | SMD/SMT |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!