SGR2N60UFDTM

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SGR2N60UFDTM

Inventory 7,276

Part

SGR2N60UFDTM

Manufacturer

Description

Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-252

Lead Free/ROHS

Datasheets

CAD Models

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Specification

Min Operating Temperature	-55 °C
Collector Emitter Saturation Voltage	2.1 V
Mount	Surface Mount
Current Rating	1.2 A
Collector Emitter Voltage (VCEO)	600 V
RoHS	Compliant
Max Collector Current	2.4 A
Max Operating Temperature	150 °C
Power Dissipation	25 W
Element Configuration	Single
Collector Emitter Breakdown Voltage	600 V
Voltage Rating (DC)	600 V
Lead Free	Lead Free
Case/Package	DPAK
Max Power Dissipation	25 W