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SI3460DV-T1-E3
the part number is SI3460DV-T1-E3
Part
SI3460DV-T1-E3
Manufacturer
Description
MOSFET N-CH 20V 5.1A 6TSOP
Lead Free/ROHS
pb RoHs
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Part
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Specification
Drain to Source Voltage (Vdss): 20V
Power Dissipation (Max): 1.1W (Ta)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Packaging: Original-Reel®
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 20V 5.1A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: N-Channel
Series: TrenchFET®
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Other Names: SI3460DV-T1-E3DKR
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
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