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SI4435DYTR
the part number is SI4435DYTR
Part
SI4435DYTR
Manufacturer
Description
MOSFET P-CH 30V 8A 8-SOIC
Lead Free/ROHS
pb RoHs
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Specification
Drain to Source Voltage (Vdss): 30V
Power Dissipation (Max): 2.5W (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Detailed Description: P-Channel 30V 8A (Tc) 2.5W (Ta) Surface Mount 8-SO
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: P-Channel
Series: HEXFET®
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 15V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Operating Temperature: -55°C ~ 150°C (TJ)
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