| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Min Operating Temperature | -55 °C |
|---|---|
| Drain to Source Breakdown Voltage | 20 V |
| Gate to Source Voltage (Vgs) | 12 V |
| Fall Time | 40 ns |
| Turn-On Delay Time | 15 ns |
| RoHS | Non-Compliant |
| Weight | 186.993455 mg |
| Max Operating Temperature | 150 °C |
| Drain to Source Voltage (Vdss) | 20 V |
| Power Dissipation | 2.5 W |
| Drain to Source Resistance | 65 mΩ |
| Continuous Drain Current (ID) | 7 A |
| Rise Time | 32 ns |
| Number of Channels | 2 |
| Length | 5 mm |
| Turn-Off Delay Time | 57 ns |
| Number of Pins | 8 |
| Height | 1.55 mm |
| Width | 4 mm |
| Case/Package | SO |
| Max Power Dissipation | 2.5 W |
VISHAY
Small Signal Field-Effect Transistor, 7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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